Scanning Electron Microscope as a Means of Studying Microplasmas at High Resolution

Abstract

Preliminary investigations of microplasmas in silicon diodes have been made using a scanning electron microscope. The qualitative results given here establish the value of the method. It is shown that it is possible (a) to examine the surface topography of the microplasma region with high resolution, (b) locate any internal defects in or near the depletion region associated with the microplasma, and (c) ``map out'' the localized area of avalanche breakdown. Three examples of such studies are given. The current limitations of the method are discussed. It is concluded that the quantitative development of the method is straightforward. Other applications of the method are proposed.