Temperature programmed desorption investigations of hydrogen and ammonia reactions on GaN

High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford et al. · Applied Physics Letters · 1995 · 960 citations

Optical Materials, Engineering, High Dislocation Densities +18

High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes

H. Morkoç̌, S. Noor Mohammad · Science · 1995 · 408 citations

Vapor pressures and phase equilibria in the GaAs system

John R. Arthur · Journal of Physics and Chemistry of Solids · 1967 · 388 citations

Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

F. A. Ponce, D. P. Bour, W. T. Young et al. · Applied Physics Letters · 1996 · 231 citations

Wide-bandgap Semiconductor, Single Crystals, Engineering +18

Cleaning of GaN surfaces

Laura L. Smith, Sean W. King, R. J. Nemanich et al. · Journal of Electronic Materials · 1996 · 136 citations

Engineering, Surface Science, Applied Physics +5