Publication | Open Access
All Solution‐Processed, Hybrid Light Emitting Field‐Effect Transistors
91
Citations
25
References
2014
Year
All solution-processed, high performance hybrid light emitting transistors (HLETs) are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented.
| Year | Citations | |
|---|---|---|
2005 | 2.2K | |
2003 | 561 | |
2005 | 557 | |
2007 | 333 | |
2009 | 291 | |
2008 | 254 | |
2005 | 229 | |
2008 | 224 | |
2012 | 157 | |
2013 | 142 |
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