Organic single-crystal light-emitting field-effect transistors

TLDR

Growth and characterization of single crystals are a major field in materials science, and achieving current‑injected laser oscillation in electronic devices remains a challenge, with OSCLEFETs offering spectrally narrowed emissions and potential light amplification. The article reviews the characteristics of organic single‑crystal light‑emitting field‑effect transistors (OSCLEFETs). The review covers single‑crystal growth methods yielding diverse morphologies, and discusses how these crystals are used to construct and evaluate OSCLEFET devices. Using single crystals enables study of intrinsic device performance and improves steady‑state operation of OSCLEFETs.

Abstract

Growth and characterisation of single crystals constitute a major field of materials science. In this feature article we overview the characteristics of organic single-crystal light-emitting field-effect transistors (OSCLEFETs). The contents include the single crystal growth of organic semiconductors and their application to transistor devices. First, we describe various single crystal growth methods that produce different morphologies and geometries of crystals. Using these single crystals we highlight construction and performance of the devices. The single crystal approach not only allows us to study the device performance that reflects the intrinsic nature of the organic semiconductors but also is advantageous to enhancement in the steady device operation. A current-injected laser oscillation in an electronic device configuration remains as a big challenge to be achieved. In this context we briefly mention the spectrally narrowed emissions as well as the possibility of light amplification in the OSCLEFETs.