Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors - Concepedia

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Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors

39

Citations

15

References

2000

Year

C.A. Dimitriadis, Mutsumi Kimura, M Miyasaka, Satoshi Inoue, Filippos Farmakis, J. Brini, G. Kamarinos

Solid-State Electronics

Electrical EngineeringGrain BoundariesEngineeringBias Temperature InstabilityApplied PhysicsSemiconductor Device FabricationSilicon On InsulatorHot-carrier Induced DegradationSemiconductor Device

References

	Year	Citations

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