Epitaxial growth of CdSexTe1−x thin films on Si(100) by molecular beam epitaxy using lattice mismatch graded structures

Material properties of high-quality GaAs epitaxial layers grown on Si substrates

R. Fischer, H. Morkoç̌, D. A. Neumann et al. · Journal of Applied Physics · 1986 · 270 citations

Natural Sciences, Materials Science, Physics +17

CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors

Y Eisen · Journal of Crystal Growth · 1998 · 117 citations

Engineering, Materials Engineering, Materials Science +14

Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors

M. Fiederle, D. Ebling, C. Eiche et al. · Journal of Crystal Growth · 1994 · 94 citations

Natural Sciences, Materials Engineering, Materials Science +13

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates

G. Brill, Y. Chen, P. M. Amirtharaj et al. · Journal of Electronic Materials · 2005 · 37 citations

Engineering, Materials Engineering, Materials Science +14

Deposition and characterization of CdSe1−<i>x</i>Te<i>x</i> thin films

Michael A. Russak · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1985 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +11