Low-temperature Polycrystalline Silicon Thin Film Transistor Flash Memory with Ferritin

Abstract

Low-temperature polycrystalline silicon (poly-Si) thin film transistor (LTPS-TFT) flash memory is a potential candidate key component of system-on-panel (SOP). We have proposed the "bio-nano-process" for the fabrication of nanodots using biotechnology. In this study, we have successfully fabricated and developed LTPS-TFT flash memory with biomineralized inorganic nanodots for the first time. High-density homogeneous nanodots were made to adsorb on a silicon film using ferritin protein without the use of vacuum systems at high temperature. Electron charging and discharging in the dots were clearly confirmed from the transient behavior of the transfer curve at room temperature. This fabrication technique is promising for the development of flash memory for SOP.