Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation

Effects of nitridation in gate oxides grown on 4H-SiC

Philippe Jamet, Sima Dimitrijev, Philip Tanner · Journal of Applied Physics · 2001 · 270 citations

Engineering, Materials Engineering, Materials Science +17

Modified Deal Grove model for the thermal oxidation of silicon carbide

Yongwook Song, Sarit Dhar, L. C. Feldman et al. · Journal of Applied Physics · 2004 · 259 citations

Engineering, Materials Engineering, Materials Science +17

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

John Rozen, Sarit Dhar, M. E. Zvanut et al. · Journal of Applied Physics · 2009 · 179 citations

Engineering, Electrical Engineering, Materials Science +17

The mechanism of defect creation and passivation at the SiC/SiO₂interface

Péter Deák, Jan M. Knaup, T. Hornos et al. · Journal of Physics D Applied Physics · 2007 · 166 citations

Engineering, Materials Engineering, Materials Science +17

Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's

Hiroshi Yano, F. Katafuchi, Tsunenobu Kimoto et al. · IEEE Transactions on Electron Devices · 1999 · 152 citations

Engineering, Electrical Engineering, Materials Science +17