Screening and elementary excitations in narrow-channel semiconductor microstructures

Abstract

The dielectric response of a one-dimensional electron gas occurring in the narrow inversion layers in metal-oxide-semiconductor field-effect transistor (or quantum-well) structures is investigated theoretically. A nonsingular screening function appropriate for dc transport calculations is derived. The plasma frequency in such a system is obtained as an explicit function of wave number. Plasmon dispersion for a lateral two-dimensional superlattice made from such one-dimensional quantum wires is also calculated.