InGaN-Based p–i–n Solar Cells with Graphene Electrodes

Abstract

InGaN-based p–i–n solar cells with graphene electrodes were fabricated and compared with solar cells using indium tin oxide (ITO) electrodes. In particular, we analyzed the properties of graphene film by means of high-resolution transmission electron microscopic (HRTEM) and Raman spectroscopy, also comparing optical properties with those of ITO, conventionally used as transparent electrodes. The solar cells using graphene revealed a short circuit current density of 0.83 mA/cm2, an open circuit voltage of 2.0 V, a fill factor of 75.2%, and conversion efficiency of 1.2%, comparable to the performance of solar cells using ITO.