Temperature and frequency dependence of the ferroelectric characteristics of BaTiO3 thin films for nonvolatile memory applications

Fatigue and switching in ferroelectric memories: Theory and experiment

H. M. Duiker, Paul D. Beale, J. F. Scott et al. · Journal of Applied Physics · 1990 · 450 citations

Natural Sciences, Materials Engineering, Materials Science +16

A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

Shu-Yau Wu · IEEE Transactions on Electron Devices · 1974 · 421 citations

Engineering, Electrical Engineering, Materials Science +15

Ferroelectric field-effect memory device using Bi4Ti3O12 film

Kiyoshi Sugibuchi, Yuko Kurogi, N. Endo · Journal of Applied Physics · 1975 · 242 citations

Engineering, Electrical Engineering, Materials Science +17

Highly insulative barium zirconate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications

Tzung-Shiun Wu, Chang-Sian Wu, M. L. Chen · Applied Physics Letters · 1996 · 174 citations

Natural Sciences, Materials Engineering, Materials Science +17

Pulsed laser deposition and ferroelectric characterization of bismuth titanate films

H. Buhay, S. Sinharoy, W. H. Kasner et al. · Applied Physics Letters · 1991 · 166 citations

Natural Sciences, Materials Engineering, Materials Science +16