Extending the Photoresponse of TiO₂ to the Visible Light Region:  Photoelectrochemical Behavior of TiO₂ Thin Films Prepared by the Radio Frequency Magnetron Sputtering Deposition Method

Abstract

TiO(2) thin films prepared by a radio frequency magnetron sputtering (RF-MS) deposition method were found to show an enhanced photoelectrochemical response in the visible light region. By controlling the temperature and the gaseous medium during the deposition step, it was possible to control the properties of these films. The photoelectrochemical behavior of the sputtered TiO(2) thin films was compared with that of a commercial TiO(2) sample, and the sputtered films showed higher incident photon to the charge carrier generation efficiency (IPCE of 12.6% at 350 nm) as well as power conversion efficiency (0.33% at 1.84 mW/cm(2)) than the commercial TiO(2) sample. Femtosecond transient absorption spectroscopy experiments have revealed that a major fraction of photogenerated electrons and holes recombine within a few picoseconds, thus limiting photocurrent generation efficiency. The mechanistic insights obtained in the present study should aid in designing semiconductor nanostructures that will maximize the charge separation efficiency and extend the response of the large band gap semiconductor TiO(2) into visible light regions.