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Ge<sub>1-x</sub>Sn<sub>x</sub> Epitaxial Growth on Ge Substrate by MOCVD
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2014
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Materials ScienceMaterials EngineeringChemical EngineeringInorganic MoleculesEngineeringGe SubstrateNanoelectronicsSurface ScienceApplied PhysicsConventional CvdXps Detection LimitChemical DepositionMolecular Beam EpitaxyEpitaxial GrowthChemical Vapor DepositionThin Film Processing
Metal-organic chemical vapor deposition have many advantages such as low deposition temperature compared to conventional CVD using inorganic molecules. In this study, we succeeded in the Ge 1-x Sn x epitaxial growth on Ge substrate by MOCVD using tertiary-butyl-germane and tetra-ethyl-tin for the precursors for the first time. The Sn concentration in the deposited film was 2 at.% which exceeds solid solubility limit of 1 at.%. The carbon impurity incorporation was confirmed to be less than the XPS detection limit.