Electroless deposition of In2O3 and In2O3:Sn(ITO)

Abstract

Transparent conducting indium oxide and indium tin oxide are prepared by electroless deposition technique. The structural studies reveal that the films are polycrystalline in nature and contain predominantly In2O3 and In2O3:Sn (ITO). Both the films, In2O3 and ITO exhibit a resistivity as low as 10−2 and 10−4 Ωcm, IR reflection ≈ 40 and ≈ 60%, and transmission in visible range ≈ 70 and ≈ 80%, respectively. The band gap of In2O3 and ITO is found to be ≈ 3.5 and ≈ 3.6 eV, respectively.