Characterization of GaxIn1−xAs grown with TMIn

Optical and crystallographic properties and impurity incorporation of Ga<i>x</i>In1−<i>x</i>As (0.44&amp;lt;<i>x</i>&amp;lt;0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition

K.-H. Goetz, D. Bimberg, H. Jürgensen et al. · Journal of Applied Physics · 1983 · 361 citations

Engineering, Materials Engineering, Materials Science +17

Velocity-field characteristics of Ga1−<i>x</i>In<i>x</i>P1−<i>y</i>As<i>y</i> quaternary alloys

M. A. Littlejohn, John R. Hauser, Tildon H. Glisson · Applied Physics Letters · 1977 · 153 citations

Natural Sciences, Materials Science, Physics +17

Asymmetric Cracking in III–V Compounds

G.H. Olsen, M. S. Abrahams, T.J. Zamerowski · Journal of The Electrochemical Society · 1974 · 106 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low pressure metalorganic chemical vapor deposition of InP and related compounds

Manijeh Razeghi, M.A. Poisson, J.P. Larivain et al. · Journal of Electronic Materials · 1983 · 93 citations

Natural Sciences, Chemistry, Materials Science +6

OMVPE growth of AlxGa1−xAs

G. B. Stringfellow · Journal of Crystal Growth · 1981 · 80 citations

Natural Sciences, Chemistry, Materials Science +2