Radiation Effects · 1979 · 12 citations · 1 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsInterface ScienceSemiconductor MaterialsDefects In Electronic MaterialsInterface EngineeringSemiconductor DefectsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesBinary CompoundsDefect FormationGallium ArsenideInterface DefectsRadiation Damage EffectsRadiation EffectsRadiation-induced Defect FormationSurface Defect Formation
Abstract The problem of interface influence on the radiation defects formation in binary semiconductor compounds such as GaAs requires a complex studying as far as it is more complicated than in monoatomic ones (Ge, Si).
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