Publication | Closed Access
Effect of the interface on radiation defect formation in gallium arsenide
12
Citations
1
References
1979
Year
SemiconductorsIon ImplantationInterface InfluenceRadiation Defect FormationEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsGallium OxideSemiconductor MaterialDefect FormationMonoatomic OnesGallium ArsenideOptoelectronicsCompound SemiconductorBinary Semiconductor CompoundsSemiconductor Device
Abstract The problem of interface influence on the radiation defects formation in binary semiconductor compounds such as GaAs requires a complex studying as far as it is more complicated than in monoatomic ones (Ge, Si).
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