Applied Physics Letters · 2008 · 30 citations · 16 references
Non-volatile MemoryEngineeringFerroelectric Random-access MemorySymmetrical HysteresisPhase Change MemoryFerroelectric ApplicationNanoelectronicsMemory DevicesPolymer ChemistryMaterials ScienceElectrical EngineeringVinylidene Fluoride-trifluoroethyleneMicroelectronicsDielectric InsulatorPolymer ScienceApplied PhysicsElectrical Bistable CharacteristicsSemiconductor MemoryThin FilmsFerroelectric PolyElectrical Insulation
We report the thermal and electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE) (72∕28mol%)] thin films as a function of varying memory device architectures. Rectangular-shaped capacitance-voltage (C-V) hysteresis loops obtained using 100nm P(VDF-TrFE) films with a metal-ferroelectric-insulator-semiconductor (MFIS) diode architecture were more suitable for distinguishing the data-bit state compared with the symmetrical hysteresis observed using metal-ferroelectric-metal capacitors. Poly(4-vinyl phenol) used as a dielectric insulator in the MFIS prevented shifting of the C-V hysteresis curve toward the negative bias voltage.
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Sumiko Fujisaki, Hiroshi Ishiwara, Yoshihisa Fujisaki · Applied Physics Letters · 2007 · 188 citations
Materials Science, Electroactive Material, Electrical Engineering +15
Low voltage switching of a spin cast ferroelectric polymer
R.C.G. Naber, Paul W. M. Blom, Albert W. Marsman et al. · Applied Physics Letters · 2004 · 162 citations · Full text