Publication | Closed Access
Evidence of Nonlocal Breakdown of the Integer Quantum Hall Effect
91
Citations
16
References
1996
Year
Wide-bandgap SemiconductorCategoryquantum ElectronicsQuantum Lattice SystemEngineeringTopological Quantum StateSemiconductorsQuantum MaterialsQuantum EntanglementHall EffectNonlocal BreakdownSemiconductor TechnologyQuantum ScienceElectrical EngineeringPhysicsQhe BreakdownQuantum SolidTopological PhaseCategoryiii-v SemiconductorSpintronicsNatural SciencesCondensed Matter PhysicsApplied PhysicsHall BarsDisordered Quantum System
Current induced breakdown of the integer quantum Hall effect (QHE) is studied in GaAs $/$AlGaAs single heterostructure Hall bars at $T\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1.6$--4.2 K and $B\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}2$--6 T ( $\ensuremath{\nu}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}2$, 4, and 6). The QHE breakdown is absent over a macroscopic region in the two-dimensional electron gas channel on the side of the electron-injecting corner of the Hall bars. The observed nonlocal nature suggests that bootstrap-type electron heating is relevant to the QHE breakdown.
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1983 | 252 | |
1983 | 226 | |
1985 | 187 | |
1986 | 147 | |
1984 | 129 | |
1980 | 84 | |
1993 | 79 | |
1994 | 68 | |
1986 | 38 | |
1994 | 38 |
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