Applied Physics Letters · 1994 · 34 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAmorphous SemiconductorsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor PhysicsSolar Cell MaterialsSolar CellsAmorphous SiliconCurrent-voltage RelationsEnergy Conversion EfficiencyHydrogenated Amorphous SiliconMulti-junction Solar CellsPhosphorus-doped Amorphous SiliconSemiconductor JunctionsTunnel Junctions
The role of the p layer in the formation of good quality ‘‘tunnel’’ junctions and its dependence on the attainment of high efficiency hydrogenated amorphous silicon alloy (a-Si:H) multijunction cells has been investigated. A new technique, namely, the evaluation of the current-voltage characteristics of the NIPN structure consisting of a single-junction n-i-p cell with an overlying doped n layer, has been developed for the determination of losses at the ‘‘tunnel’’ junction. Using an optimized p layer, an initial conversion efficiency of 11.4% has been obtained on a double junction a-Si:H module of aperture area ∼900 cm2.
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