Journal of Applied Physics · 2005 · 89 citations · 9 references
EngineeringOptoelectronic DevicesSilicon On InsulatorSemiconductor NanostructuresSemiconductorsSilicon NanocrystallitesMaterials ScienceElectroluminescence SignalPhotoluminescenceCrystalline DefectsNanotechnologyOptoelectronic MaterialsElectroluminescence ResultsSemiconductor MaterialNanocrystalline MaterialSio2 Thin FilmsNanomaterialsApplied PhysicsSize-controlled Silicon NanocrystallitesThin FilmsOptoelectronics
Silicon nanocrystallites (nc-Si) were obtained by thermal annealing treatments of SiO∕SiO2 multilayers, prepared by evaporation. The nc-Si size was controlled by the SiO thickness. In this study the SiO2 thickness was maintained at 5nm and the SiO thickness was varied from 2to6nm. The film’s microstructure was studied by transmission electron microscopy. A strong photoluminescence was obtained in the visible range which corresponds to the radiative recombination of electron-hole pairs in the nc-Si. The electroluminescence signal is weaker and broader than the photoluminescence one. A model taking into account SiO2 defects and nc-Si is proposed to explain the electroluminescence results.
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