Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers

A new intrinsic defect in amorphous SiO2: Twofold coordinated silicon

Linards Skuja, A. N. Streletsky, A.B. Pakovich · Solid State Communications · 1984 · 341 citations

Natural Sciences, Materials Engineering, Materials Science +14

Cathodoluminescence microcharacterization of the defect structure of quartz

M. A. Stevens Kalceff, Matthew R. Phillips · Physical review. B, Condensed matter · 1995 · 314 citations

Natural Sciences, Materials Engineering, Materials Science +17

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

L. Rebohle, J. von Borany, H. Fröb et al. · Applied Physics B · 2000 · 170 citations

Engineering, Materials Engineering, Materials Science +16

Correlations of the 4.77–4.28-eV luminescence band in silicon dioxide with the oxygen vacancy

C. E. Jones, David Embree · Journal of Applied Physics · 1976 · 106 citations

Engineering, Chemistry, Materials Science +17

Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films

J. von Borany, R. Grötzschel, K.‐H. Heinig et al. · Applied Physics Letters · 1997 · 99 citations

Engineering, Materials Engineering, Materials Science +16