Applied Physics Letters · 2000 · 108 citations · 10 references
Optical MaterialsEngineeringOptoelectronic DevicesSilicon On InsulatorLuminescence PropertySilicon Quantum DotsSemiconductor NanostructuresSemiconductorsQuantum DotsEl IntensityThin Sio2 LayersCompound SemiconductorLow-temperature ElectroluminescenceElectrical EngineeringPhotoluminescencePhysicsNanotechnologyPhotonic MaterialsOptoelectronic MaterialsNanocrystalline MaterialSingle LayerEl Peak WavelengthApplied PhysicsOptoelectronics
Room- and low-temperature electroluminescence (EL) in the visible range was observed from a single layer of silicon nanocrystals in between two thin SiO2 layers. The EL peak wavelength exhibited tunability from the red (∼800 nm) to the yellow (∼600 nm) depending on the excitation voltage. By decreasing the temperature while keeping the excitation voltage constant, an increase in EL intensity was observed together with a blueshift in EL peak position. This blueshift was much larger than that observed under optical excitation. Nonradiative Auger recombination, Coulomb charging effects, and/or the quantum-confined Stark effect are considered accountable for this behavior.
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Variational calculations on a quantum well in an electric field
G. Bastard, E. E. Méndez, L.L. Chang et al. · Physical review. B, Condensed matter · 1983 · 782 citations
Auger and Coulomb Charging Effects in Semiconductor Nanocrystallites
Christophe Delerue, M. Lannoo, G. Allan et al. · Physical Review Letters · 1995 · 124 citations
Semiconductors, Materials Science, Electrical Engineering +15