Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

Abstract

We report a method to determine the radiative efficiency (RE) of a semiconductor by using room-temperature excitation-dependent photoluminescence measurements. Using the ABC model for describing the recombination of carriers, we show that the theoretical width of the RE-versus-carrier-concentration (n) curve is related to the peak RE. Since the normalized external quantum efficiency, EQEnormalized, is proportional to the RE, and the square root of the light-output power, LOP, is proportional to n, the experimentally determined width of the EQEnormalized-versus-n curve can be used to determine the RE. We demonstrate a peak RE of 91% for a Ga0.85In0.15N quantum well.