Physical Review Letters · 1994 · 38 citations · 18 references
Natural SciencesPhysicsCondensed Matter PhysicsQuantum MechanicsSemiconductor DevicesQuantum TunnelingSemiconductor Physics
Submicron resonant tunneling diodes fabricated by a novel processing technique exhibit two series of peaks in their current-voltage characteristics. The peaks are strongly dependent on both the magnitude and direction of a magnetic field oriented perpendicular to the tunnel current. This dependence is used to unambiguously identify resonant tunneling between one-dimensional quantum wire states.
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Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations
Fermi-edge singularity in resonant tunneling
A. K. Geǐm, P. C. Main, Newton La Scala et al. · Physical Review Letters · 1994 · 171 citations