A Three‐Dimensional Porous Silicon p–n Diode for Betavoltaics and Photovoltaics

W. Sun, Nazir P. Kherani, Karl D. Hirschman, L.L. Gadeken, Philippe M. Fauchet

Advanced Materials · 2005 · 161 citations · 10 references

Concepts

Abstract

Three-dimensional porous silicon p–n diodes made by standard industrial processing (see Figure) result in an energy-conversion layer with a large surface/volume ratio. This structure increases radioisotope energy-conversion efficiency tenfold, and could lead to a practical nuclear battery that lasts for many years. Experimental results also show marked photovoltaic response.

References

10