The Physics of Macropore Formation in Low‐Doped p‐Type Silicon

Abstract

The dependence of the morphology of macropores in p‐type silicon electrodes on formation parameters such as substrate doping density, electrolyte composition, and applied current density is investigated. The results are compared with the well‐understood case of electrochemical macropore formation on n‐type silicon electrodes. A growth model is derived in which pore formation is shown to be a consequence of charge‐transfer mechanisms in a Schottky diode applied to a nonplanar interface. © 1999 The Electrochemical Society. All rights reserved.