Nitrides optoelectronic devices grown by molecular beam epitaxy

Abstract

Abstract We report on the characteristics of our recent room temperature continuous‐wave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE). Uncoated ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous‐wave (cw) threshold current of 110 mA, corresponding to a threshold current density of 5.5 kA cm –2 . We report on our steps taken to reduce threshold voltage to 7 V. Lasers with uncoated facets have a maximum cw output power of 14 mW and a cw characteristic temperature T 0 of 123 K. Cw laser lifetime vs. power dissipation data is presented, with a maximum lifetime of 2.6 hours for the best laser. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)