High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

Total Room Temperature Wet Cleaning for Si Substrate Surface

Tadahiro Ohmi · Journal of The Electrochemical Society · 1996 · 189 citations

Engineering, Ultraclean Technology, Large Volume +16

Ion-energy effects in silicon ion-beam epitaxy

J. W. Rabalais, A. Al-Bayati, Kevin J. Boyd et al. · Physical review. B, Condensed matter · 1996 · 100 citations

Materials Science, Ion Implantation, Engineering +12

SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition

Jean‐Michel Hartmann, V. Loup, G. Rolland et al. · Journal of Crystal Growth · 2002 · 93 citations

Materials Engineering, Materials Science, Engineering +8

Significant improvement in silicon chemical vapor deposition epitaxy above the surface dehydrogenation temperature

Qi Wang, Charles W. Teplin, Paul Stradins et al. · Journal of Applied Physics · 2006 · 35 citations

Engineering, Significant Improvement, Chemical Deposition +16

Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode

Hiromasa Ohmi, Hiroaki Kakiuchi, Naotaka Tawara et al. · Japanese Journal of Applied Physics · 2006 · 33 citations

Materials Science, Electrical Engineering, Epitaxial Si Films +15