Preparation of Pb(Zr, Ti)O₃ Films on Si Substrate by Laser Ablation

Abstract

Lead-zirconate-titanate (PZT) thin films were prepared on oxidized Si(100)-substrate with a thin film electrode by laser ablation. Ferroelectric perovskite phase was obtained in the PZT films on Ni-alloy/SiO 2 /Si substrate with the substrate temperature above 500°C, but it was not obtained in the films on Pt/SiO 2 /Si. The switching voltage of remanent polarization ( P r ) decreased with decreasing PZT film thickness. The 0.15-µm-thick film showed P r of 15 µC/cm 2 with a swing voltage of 5 V.