Preparation and Switching Kinetics of Pb(Zr, Ti)O₃ Thin Films Deposited by Reactive Sputtering

Abstract

Ferroelectric Pb(Zr, Ti)O 3 [PZT] thin films have been prepared on Pt/Ti/SiO 2 /Si and Pt/SiO 2 /Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT(80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595°C on highly (111)-oriented Pt films formed on SiO 2 /Si substrates. When an 8 V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50×50 µm 2 , the switching time and the switched charge density measured were 20 ns and 10 µC/cm 2 , respectively. The switching time was strongly dependent on the electrode area.