Energy Dependence of Proton-Induced Displacement Damage in Gallium Arsenide

Abstract

Nonionizing energy deposition in gallium arsenide has been calculated for protons with energies ranging from 1 to 1000 MeV. The calculations are compared with new experimental results for ion implanted gallium arsenide resistors and Hall samples irradiated with protons in the energy range 1 to 60 MeV. Results are also compared with recent studies of proton induced displacement damage in silicon.