A novel low-temperature (Ba,Sr)TiO3 (BST) process with barrier for Gbit DRAM applications - Concepedia

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A novel low-temperature (Ba,Sr)TiO3 (BST) process with barrier for Gbit DRAM applications

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Citations

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References

1999

Year

G. Beitel, H. Wendt, E. Fritsch, Volker Weinrich, M. Engelhardt, B. Hasler, T. Röhr, Robert Bergmann, U. Scheler, K.-H. Malek,

Microelectronic Engineering

Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringOxide ElectronicsBias Temperature InstabilityApplied PhysicsGbit Dram ApplicationsNovel Low-temperatureMicroelectronics

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