Space charge effects in focused ion beams

Y. W. Yau, T. R. Groves, R. F. W. Pease

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 11 citations · 0 references

Concepts

Abstract

Focused ion beams have significant advantages (over other directed energy beams) in terms of resist response and direct materials processing. However, the low value of q/m raises questions about space charge effects—particularly the stochastic effects which limit high throughput e-beam systems. We have modified the space charge simulation program originally set up for electrons to allow for a greater number of particles and the effect of energy spreading in the source accelerating region. Beams of 50 keV Ga ions suffer serious spreading at currents above 1 nA (α=2 mrad); 50 keV protons suffer similar spreading at currents above 50 nA.