Applied Physics Letters · 1993 · 68 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesOptoelectronic DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSilicon MaterialsBand GapDirect Band GapElectron-hole RecombinationLight Emission SpectraLight-emitting DevicesPhotonic Band GapPorous SiliconSemiconductor Light-emitting Materials
We observed visible light emission with a peak wavelength of 640 nm from forward biased, heavily doped porous silicon homojunction pn diodes. The light emission is attributed to electron-hole recombination across the direct band gap of the monocrystalline quantum wires which make up the porous silicon junction layers.
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Porous silicon formation mechanisms
R. L. Smith, Scott D. Collins · Journal of Applied Physics · 1992 · 1.2K citations