Applied Physics Letters · 1996 · 60 citations · 1 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsTransport PhenomenaCarrier TransportDiffusion In SolidsDopingIon ImplantationSilicon MaterialsSolid-state DiffusionAtomic DiffusionImpurity DiffusionImpurity PathwaysInterstitial DiffusionSelf-diffusion In SolidsSilicon ImpuritiesTransient Diffusion AnalysisTransient Enhanced Diffusion
Transient diffusion of ion-implanted B is inhibited in the presence of high C or B concentrations, due to the formation of interstitial clusters stabilized by impurity atoms. Comparison between experiments and simulations suggests that the number of self-interstitials trapped per clustered impurity atoms is ≊1.15 for C and ∼1 for B, consistent with a volume compensation mechanism.
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