Role of C and B clusters in transient diffusion of B in silicon

Abstract

Transient diffusion of ion-implanted B is inhibited in the presence of high C or B concentrations, due to the formation of interstitial clusters stabilized by impurity atoms. Comparison between experiments and simulations suggests that the number of self-interstitials trapped per clustered impurity atoms is ≊1.15 for C and ∼1 for B, consistent with a volume compensation mechanism.