Applied Physics Letters · 2010 · 38 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsInfrared DetectorsOptical DetectorsOptoelectronic DevicesPhotodetectorsQuantum DotsQuantum OptoelectronicsInfrared PhotodetectorsOptical Absorption CoefficientPhotodetector DetectivityQuantum Dot DevicesQuantum Dot PhotodetectorsQuantum Well Infrared PhotodetectorsQuantum Well PhotodetectorsSemiconductor Quantum Dots
We report a systematic study of different transitions in quantum dots-in-a-well infrared photodetectors in order to optimize the signal to noise ratio of the detector. Bound to continuum transitions offer very high extraction probability for photoexcited electrons but poor absorption coefficient, while the bound to bound transitions have higher absorption but poorer extraction probability. Bound to quasibound transitions are optimum for intermediate values of electric fields with superior signal to noise ratio. The bound to quasibound device has the detectivity of 4×1011 cm Hz1/2 W−1 (3V, f/2 system) at 77 K and 7.4×108 cm Hz1/2 W−1 at 200 K, which is highest reported detectivity at 200 K for detector with long wave cutoff wavelength.
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Quantum-well infrared photodetectors
B. F. Levine · Journal of Applied Physics · 1993 · 1.7K citations
Review of current progress in quantum dot infrared photodetectors
Ajit V. Barve, S.J. Lee, S. K. Noh et al. · Laser & Photonics Review · 2009 · 142 citations