Applied Physics Letters · 1979 · 30 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsNoise In Semiconductor DevicesPhotodetectorsSemiconductor DetectorsSemiconductor Device MaterialsSemiconductor PhysicsThermal Properties Of SemiconductorsPhotodetectionPhotodiodesThermal NoiseThermal Noise Analysis
This letter reports the first realization of backside-illuminated HgCdTe/CdTe photodiodes prepared by a liquid-phase-epitaxy technique. The thermal noise of these diodes is lower than that of bulk HgCdTe diodes fabricated under otherwise similar conditions. This is explained by an analytical model based on material parameters and the geometry of n+-p diodes.
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Infrared focal planes in intrinsic semiconductors
J.T. Longo, D. T. Cheung, A. M. Andrews et al. · IEEE Transactions on Electron Devices · 1978 · 72 citations