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Optical dephasing of homogeneously broadened two-dimensional exciton transitions in GaAs quantum wells
259
Citations
13
References
1986
Year
Homogeneous BroadeningCategoryquantum ElectronicsQuantum PhotonicsCharge ExcitationsEngineeringBroadening MechanismTwo-dimensional Exciton TransitionsSemiconductorsOptical PropertiesOptical DephasingNanophotonicsQuantum SciencePhotonicsPhotoluminescencePhysicsQuantum DeviceGaas Quantum WellsApplied PhysicsPhononExcitonic AbsorptionQuantum Photonic DeviceOptoelectronics
We report optical dephasing of two-dimensional excitons in $\mathrm{GaAs}\ensuremath{-}{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ single quantum wells by means of time-resolved degenerate-four-wave mixing and transmission experiments in the temperature range below 80 K. The observed absorption linewidths correspond directly to the excitonic phase coherence times, confirming the homogeneous broadening of the excitonic absorption. A linear temperature dependence of the homogeneous linewidth indicates acoustic-phonon scattering as the broadening mechanism.
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