Amorphous ZnO–In2O3 transparent conductive films by simultaneous sputtering method of ZnO and In2O3 targets

Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System

Noboru Kimizuka, Mitsumasa Isobe, Masaki Nakamura · Journal of Solid State Chemistry · 1995 · 251 citations

Natural Sciences, Chemistry, Materials Science +16

Phase Relationships and Physical Properties of Homologous Compounds in the Zinc Oxide‐Indium Oxide System

Toshihiro Moriga, Doreen D. Edwards, Thomas O. Mason et al. · Journal of the American Ceramic Society · 1998 · 187 citations

Natural Sciences, Chemistry, Materials Science +16

Preparation of transparent and conductive In2O3–ZnO films by radio frequency magnetron sputtering

Tadatsugu Minami, Toshikazu Kakumu, Shinzo Takata · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1996 · 156 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical and Optical Properties of Radio-Frequency-Sputtered Thin Films of (ZnO)₅In₂O₃

Hidenori Hiramatsu, Won‐Seon Seo, Kunihito Koumoto · Chemistry of Materials · 1998 · 92 citations

Natural Sciences, Materials Engineering, Materials Science +17

Film properties of ZnO:Al prepared by cosputtering of ZnO:Al and either Zn or Al targets

Kikuo Tominaga, Haruhiko Manabe, N. Umezu et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 43 citations

Natural Sciences, Materials Engineering, Materials Science +17