Preparation and Properties of Zinc Oxide Films Grown by the Oxidation of Diethylzinc

Abstract

This paper describes the preparation and properties of zinc oxide films grown by the oxidation of diethylzinc. It is shown that growth above 250°C, with an oxygen to diethylzinc mole ratio in excess of 10, results in stable films of zinc oxide, free from carbon contamination or zinc‐ethyl groups. Details are provided of these growth conditions and also of the resulting growth parameters in this paper. The physical properties of films grown by this technique are also described, with particular emphasis on their IR absorption characteristics, stoichiometry, refractive index, and crystallographic orientation, as a function of the growth conditions. Films are shown to have an oxygen deficiency which increases with growth temperature, as does their refractive index. Film orientation, along the c‐axis, is also found to improve with increasing growth temperatures.