3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350°c channel temperature

Abstract

The authors report for the first time the observation of GaN-on-Diamond HEMTs each operating continuously at channel temperatures of 290°C and 350°C for 9,000+ hrs and 3,000+ hrs respectively per HEMT. No catastrophic failures were observed whereas all the control GaN-on-Si HEMTs exhibited catastrophic failures.