Temperature Sensor Made of Amorphous Indium–Gallium–Zinc Oxide TFTs

Abstract

We report temperature sensors with amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). The threshold voltage of a-IGZO TFTs shows linear dependency with temperature, which enables them to be used for temperature sensing. The single TFT sensor is simple, but its sensitivity is not high. However, significantly better sensitivity can be achieved by connecting several TFTs in a parallel series to create a multi-TFT sensor. The performances of the TFT sensors fabricated both for single and multi-TFTs are well matched with simulation results.