Applied Physics Letters · 2014 · 56 citations · 24 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum WellsSemiconductor PhysicsTerahertz SpectroscopyWide Band Gap SemiconductorsWide-bandgap SemiconductorsCharge Carrier DensityGallium Nitride (Gan) MaterialsImpuritiesMany-body EffectsOptical Absorption In Quantum WellsQuantum Well HeterostructuresQuantum Well StructuresTerahertz Absorption Spectroscopy
We demonstrate THz intersubband absorption (15.6–26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a ∼40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.
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