Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)

Abstract

The optical properties of self-assembled InAs dots on InP have been measured by photoluminescence, and using a selective chemical etching of the InP cap layer, the geometrical properties of the same dots have been determined by atomic force microscopy. From the dot dimensions, the calculated (n=1) electron to heavy hole transition energies with a simple model are strongly correlated to the measured photoluminescence spectra. This technique allows a better understanding of the correlation between structural and optical properties of self-assembled dots.