Model for drain current RTS amplitude in small-area MOS transistors

Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/<i>ƒ</i>) noise

M. J. Kirton, Michael J. Uren · Advances In Physics · 1989 · 1.3K citations

Natural Sciences, Materials Science, Physics +17

1/<i>f</i> and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors

Michael J. Uren, D. J. Day, M. J. Kirton · Applied Physics Letters · 1985 · 312 citations

Engineering, Electrical Engineering, Microelectronics +15

Random telegraph noise of deep-submicrometer MOSFETs

Kuo-Hsiang Hung, P.K. Ko, Chenming Hu et al. · IEEE Electron Device Letters · 1990 · 309 citations

Engineering, Electrical Engineering, Electronic Materials +16

A physical model for random telegraph signal currents in semiconductor devices

K. Kandiah, M.O. Deighton, F.B. Whiting · Journal of Applied Physics · 1989 · 132 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

On the theory of carrier number fluctuations in MOS devices

G. Ghibaudo · Solid-State Electronics · 1989 · 115 citations

Engineering, Electrical Engineering, Microelectronics +13