Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 18 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureSurface ScienceThin FilmsAuger Electron SpectroscopyElectron MicroscopySuperconducting MaterialsSuperconducting Thin FilmsThin Film Electrical PropertiesTransmission Electron MicroscopyElectron Beam Irradiation EffectsElectron Beam-induced DamageHigh-temperature Superconducting FilmsIrradiation EffectsResistivitySuperconducting PropertiesTemperature-dependent ResistivityThin-film Superconductors
Electron beam (EB) irradiation effects for Y and Bi system thin films are investigated. It is observed through Auger electron spectroscopy (AES) study that as EB exposure increases oxygen Auger intensity for both films decreases due to EB desorption, while at the same time Cu for Y system and Bi for Bi system Auger intensities increase. Moreover, in transmission electron microscopy (TEM) studies, a BiOx like crystal structure is observed on the Bi system surface after EB irradiation. By measuring electron dose dependencies of resistivity versus temperature, it became clear that the crystal structure of a Bi system thin film is destroyed with a lower electron dose, than for Y system thin films. A 0.1 μm thick Bi film irradiated at 0.54 C/cm2 dose indicates nonsuperconducting characteristics.