Concepedia

Study and application of the mass transport phenomenon in InP

T. R. Chen, Lily Chiu, A. Hasson, Kevin Yu, U. Koren, S. Margalit, A. Yariv

Journal of Applied Physics · 1983 · 32 citations · 4 references

DOI

Concepts

Abstract

A study of the mass transport phenomenon in InP is presented. Conditions and possible explanation for the transport process are discussed. Characteristics of the mass transported InP homojunctions are described and compared with those in the InP–InGaAsP heterojunctions. Effects of the mass transported junction on laser performance are discussed.

References

4

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J.l Cahn, Deanna Hoffman · Acta Metallurgica · 1974 · 387 citations

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A novel technique for GaInAsP/InP buried heterostructure laser fabrication

Z. L. Liau, J. N. Walpole · Applied Physics Letters · 1982 · 83 citations

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Measurement of radiative and auger recombination rates in <i>p</i> -type InGaAsP diode lasers

C. B. Su, J. Schlafer, J. Manning et al. · Electronics Letters · 1982 · 31 citations

Low threshold InGaAsP terrace mass transport laser on semi-insulating substrate

T. R. Chen, Lily Chiu, Kevin Yu et al. · Applied Physics Letters · 1982 · 20 citations

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