Concepedia

A novel technique for GaInAsP/InP buried heterostructure laser fabrication

Z. L. Liau, J. N. Walpole

Applied Physics Letters · 1982 · 83 citations · 9 references

DOI

Concepts

Abstract

A simple fabrication technique for GaInAsP/InP buried heterostructure lasers has been developed based on a newly observed mass transport phenomenon on chemically etched InP mesas. Threshold currents as low as 9.0 mA have been obtained.

References

9

Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers

M. Hirao, Atsutoshi Doi, S. Tsuji et al. · Journal of Applied Physics · 1980 · 93 citations

, , +17

Room-temperature cw operation of buried-stripe double-heterostructure GaInAsP/InP diode lasers

J. J. Hsieh, Chao Shen · Applied Physics Letters · 1977 · 91 citations

, , +15

CW electrooptical properties of InGaAsP(λ = 1.3 µm) buried-heterostructure lasers

R. J. Nelson, R. B. Wilson, P. D. Wright et al. · IEEE Journal of Quantum Electronics · 1981 · 62 citations

, , +17

InP/GaInAsP Buried Heterostructure Lasers of 1.5 µm Region

Haruo Nagai, Yoshio Noguchi, Kenichiro Takahei et al. · Japanese Journal of Applied Physics · 1980 · 49 citations

, , +15

Low threshold InGaAsP/InP buried crescent laser with double current confinement structure

E. Oomura, T. Murotani, H. Higuchi et al. · IEEE Journal of Quantum Electronics · 1981 · 44 citations

, , +16