Publication | Closed Access
A novel technique for GaInAsP/InP buried heterostructure laser fabrication
83
Citations
9
References
1982
Year
PhotonicsAdvanced Laser ProcessingEngineeringSemiconductor LasersApplied PhysicsLaser ApplicationsMass Transport PhenomenonSimple Fabrication TechniqueMolecular Beam EpitaxyMicroelectronicsThreshold CurrentsOptoelectronicsCategoryiii-v SemiconductorHeterostructure Laser Fabrication
A simple fabrication technique for GaInAsP/InP buried heterostructure lasers has been developed based on a newly observed mass transport phenomenon on chemically etched InP mesas. Threshold currents as low as 9.0 mA have been obtained.
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