Nucleation temperature of large oxide precipitates in as-grown Czochralski silicon crystal

Infrared Absorption of Oxygen in Silicon

Henry J. Hrostowski, R. Kaiser · Physical Review · 1957 · 230 citations

Natural Sciences, Chemistry, Materials Science +14

Diffusion-limited growth of oxide precipitates in czochralski silison

Kazumi Wada, Naohisa Inoue, Kazutake Köhra · Journal of Crystal Growth · 1980 · 104 citations

Natural Sciences, Materials Engineering, Materials Science +13

Minority carrier lifetime in annealed silicon crystals containing oxygen

Kai Yang, H. Kappert, G. H. Schwuttke · physica status solidi (a) · 1978 · 87 citations

Engineering, Materials Engineering, Materials Science +14

Homogeneous nucleation of oxide precipitates in Czochralski-grown silicon

Jiro Ōsaka, Naohisa Inoue, Kazumi Wada · Applied Physics Letters · 1980 · 76 citations

Natural Sciences, Materials Engineering, Materials Science +16

Effect of Microscopic Growth Rate on Oxygen Microsegregation and Swirl Defect Distribution in Czochralski‐Grown Silicon

A. Murgai, H. C. Gatos, W. A. Westdorp · Journal of The Electrochemical Society · 1979 · 43 citations · Full text

Engineering, Materials Engineering, Materials Science +16