Chemical Vapor Deposition · 2007 · 21 citations · 25 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistryThin FilmsTransport PhenomenaAluminum OxidesMagnetic OxidesSurface PhysicsThin Film Electrical PropertiesThin Film Magnetic PropertiesThin-film MaterialsElectrical PropertiesElectrical Transport PropertiesFilm Growth MechanismsInterfacial Transport PropertiesOxide Growth KineticsSurface Reaction MechanismsThin Oxide FilmsThin-film Growth Mechanisms
Abstract In this work we report on the structure and magnetic and electrical transport properties of CrO 2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO 3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410 °C, and oxygen carrier gas flow rates of 50–500 sccm, showing that it is viable to grow highly oriented a ‐axis CrO 2 films at temperatures as low as 330 °C i.e., 60–70 °C lower than is reported in published data for the same chemical system. Depending on the experimental conditions, growth kinetic regimes dominated either by surface reaction or by mass‐transport mechanisms are identified. The growth of a Cr 2 O 3 interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330 °C keep the same high quality magnetic and transport properties as those deposited at higher temperatures.
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Measuring the Spin Polarization of a Metal with a Superconducting Point Contact
R. J. Soulen, J. M. Byers, M. S. Osofsky et al. · Science · 1998 · 1.8K citations
A spin triplet supercurrent through the half-metallic ferromagnet CrO2
R. S. Keizer, Sebastian T. B. Goennenwein, T. M. Klapwijk et al. · Nature · 2006 · 756 citations · Full text